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OverviewAddressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications. Full Product DetailsAuthor: H. V. Klapdor-Kleingrothaus , I. V. KrivosheinaPublisher: Taylor & Francis Ltd Imprint: Institute of Physics Publishing Dimensions: Width: 15.60cm , Height: 6.10cm , Length: 23.40cm Weight: 2.063kg ISBN: 9780750307314ISBN 10: 0750307315 Pages: 1268 Publication Date: 01 January 2000 Audience: College/higher education , Professional and scholarly , Undergraduate , Postgraduate, Research & Scholarly Format: Hardback Publisher's Status: Active Availability: In Print ![]() This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us. Table of ContentsReviewsAuthor InformationH. V. Klapdor-Kleingrothaus Tab Content 6Author Website:Countries AvailableAll regions |