A Study on Gate Dielectrics for GE Mos Devices
Author:   Chunxia Li ,  李春霞
Publisher:   Open Dissertation Press
ISBN:  

9781374803626


Publication Date:   28 January 2017
Format:   Paperback
Availability:   Available To Order   Availability explained
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A Study on Gate Dielectrics for GE Mos Devices


Overview

This dissertation, A Study on Gate Dielectrics for Ge MOS Devices by Chunxia, Li, 李春霞, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4370387 Subjects: DielectricsMetal oxide semiconductors, ComplementaryGermanium

Full Product Details

Author:   Chunxia Li ,  李春霞
Publisher:   Open Dissertation Press
Imprint:   Open Dissertation Press
Dimensions:   Width: 21.60cm , Height: 1.00cm , Length: 27.90cm
Weight:   0.431kg
ISBN:  

9781374803626


ISBN 10:   1374803626
Publication Date:   28 January 2017
Audience:   General/trade ,  General
Format:   Paperback
Publisher's Status:   Active
Availability:   Available To Order   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.

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