3D Integration of Resistive Switching Memory
Author:   Qing Luo
Publisher:   Taylor & Francis Ltd
ISBN:  

9781032489506


Pages:   98
Publication Date:   19 December 2024
Format:   Paperback
Availability:   In Print   Availability explained
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3D Integration of Resistive Switching Memory


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Author:   Qing Luo
Publisher:   Taylor & Francis Ltd
Imprint:   CRC Press
Weight:   0.200kg
ISBN:  

9781032489506


ISBN 10:   1032489502
Pages:   98
Publication Date:   19 December 2024
Audience:   General/trade ,  College/higher education ,  Professional and scholarly ,  General ,  Tertiary & Higher Education
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

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Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.

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